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r 20 1 604f 1 / 1 5 n ??? n - channel mosfet j cs 4n 6 0 order codes ? marking ? package halogen free ? packaging device weight jcs4n60v - o - v - n - b jcs4n60v ipak no tube 0.3 5 g(typ) jcs4n60r - o - r - n - b jcs4n60r dpak no tu be 0.3 0 g(typ) jcs4n60r - o - r - n - a jcs4n60r dpak no reel 0.30 g(typ) jcs4n60s - o - s - n - b jcs4n60s to - 263 no tube 1.37 g(typ) jcs4n60b - o - b - n - b jcs4n60b to - 262 no tube 1.71 g(typ) jcs4n60c - o - c - n - b jcs4n60c to - 220c no tube 2.15 g(typ ) jcs4n60f - o - f - n - b jcs4n60f to - 220mf no tube 2.20 g(typ) jcs4n60f - o - f 1 - n - b jcs4n60f to - 220mf - k1 no tube 1.78 g(typ) ? main characteristics i d 4 .0 a v dss 6 00 v rdson vgs=10v 2.5 qg 2 7 nc ? l ??? l l ups ? applications l high efficiency switch mode power supplies l electronic lamp ballasts based on half bridge l ups ? l ? l c rss ( ? 14 pf) l ?? l ??? l ? dv/dt l rohs ? features l l ow gate charge l low c rss (typical 1 4 pf ) l fast switching l 100% avalanche tested l improved dv/dt capa bility l rohs product ? order message ? package
r jcs 4n 60 20 1 604f 2 / 1 6 ?? absolute ratings (tc=25 ) * ?? *dra in current limited by maximum junction temperature ? value ? parameter symbol jcs4n60 v/r jcs4n60 s/b/c jcs4n6 0f (to - 22 0mf) jcs4n60f (to - 220mf - k1) unit ? ??? drain - source voltage v dss 600 v 4.0 4.0 * a ? drain current - continuous i d t=25 t=100 2.5 2.5 * a ? ? 1 drain current - pulse note 1 i dm 1 6 16 * a ??? gate - source voltage v gss 30 v ? ? 2 single pulsed avalanc he energy note 2 e as 240 mj ? ? 1 avalanche current note 1 i ar 4.0 a ?? ? 1 repetitive avalanche current note 1 e ar 10.0 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 5.5 v/ns 51 100 48 40 w ? power dissipation p d t c =25 - derate above 25 0.39 0. 80 0. 38 0.32 w/ ??? operating and storage temperature range t j t stg - 55 +150 ?? maximum lead temperature for soldering purposes t l 300
r jcs 4n 60 20 1 604f 3 / 1 6 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off ? characteristics ? ?? drain - source voltage bv dss i d =250 a, v gs =0v 6 00 - - v ? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 65 - v/ v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a ???? zero gate voltage drain current i dss v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forw ard i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resista nce r ds(on) v gs =10v , i d = 2 a - 2.0 2.5 ? forward transconductance g fs v ds = 40v , i d = 2 a note 4 - 4.7 - s ? dynamic characteristics input capacitance c iss - 710 920 pf output capacitance c oss - 65 85 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 14 19 pf
r jcs 4n 60 20 1 604f 4 / 1 6 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) - 20 50 ns ? turn - on rise time t r - 55 120 ns ?? turn - off delay time t d (off) - 70 150 ns ?? turn - off fall time t f v dd = 30 0v,i d = 4 a,r g =25? note 4 5 - 55 120 ns ? total gate charge q g - 2 7 30 nc ? ? gate - source charge q gs - 3.6 - nc ? ? gate - drain charge q gd v ds = 48 0v , i d = 4 a v gs =10v note 4 5 - 13.1 - nc ? ???? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 4 a maximum pulsed drain - source diode forward current i sm - - 1 6 a ? drain - source diode forward voltage v sd v gs =0 v, i s = 4 .0 a - - 1. 4 v ?? reverse recovery time t rr - 33 0 - ns ? reverse recovery charge q rr v gs =0v, i s = 4 .0 a di f /dt=100a/ s (note 4) - 2.6 7 - c t hermal characteristic max ? parameter symbol jcs 4n60 v/r jcs 4n60 s/b /c jcs 4n60f ( to - 220mf) jcs 4n60f (to - 22 0mf - k1) unit ??? thermal resistance, junction to case r th(j - c) 2.50 1.25 2.60 3.11 w ? thermal resistance, junction to ambient r th(j - a) 83 62.5 36.9 43.7 w ? 1 ? 2 l = 25 mh, i as = 4 .0 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 25 mh, i as = 4 .0 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , starting t j =2 5 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature
r jcs 4n 60 20 1 604f 5 / 1 6 electrical characteristics (curves ) o n - region characteristics transfer characteristics on - resistance variation vs. drain current and gate v oltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes 1. 250s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 10 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i d [a] v ds [v] 0 1 2 3 4 5 6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 note t j =25 v gs =10v r ds (on) [ ] i d [a] v gs =20v 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 v ds =480v v ds =300v v ds =120v q g toltal gate charge [nc] v gs gate source voltage[v]
r jcs 4n 60 20 1 604f 6 / 1 6 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 notes 1. v g s =0v 2. i d =250a t j [ ] bv dss (normalized) breakdown voltage variation vs. temperature on - resis tance variation vs. temperature maximum safe operating area for jcs 4n60 f (to - 220mf) maximum drain current vs. case temperature maximum safe operating area for jcs4n60 v/r/ s/b/c -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =2.0a r ds (on ) (normalized) t j [ ] maximum safe operating area for jcs4n60f(to - 220mf - k1)
r jcs 4n 60 20 1 604f 7 / 1 6 electrical characteristics (curves) tr ansient thermal response curve for jcs 4 n60s/b/c transient thermal response curve for jcs 4 n60 f (to - 220mf) transient thermal response curve for jcs4n60v/r
r jcs 4n 60 20 1 604f 8 / 1 6 transient thermal response curve for jcs4n60f(to - 220mf - k1 )
r jcs 4n 60 20 1 604f 9 / 1 6 ? package mechanical data ipak u nit mm
r jcs 4n 60 20 1 604f 10 / 1 6 ? package mechanical data dpak reel u nit mm
r jcs 4n 60 20 1 604f 11 / 1 6 ? package mechanical data to - 2 6 2 u nit mm
r jcs 4n 60 20 1 604f 12 / 1 6 ? package mechanical data to - 2 63 reel u nit mm
r jcs 4n 60 20 1 604f 13 / 1 6 ? package mechanical data to - 2 20 c u nit mm
r jcs 4n 60 20 1 604f 14 / 1 6 ? package mechanical data to - 2 20 mf u nit mm
r jcs 4n 60 20 1 604f 15 / 1 6 ? package mechanical data to - 2 20 mf - k1 u nit mm
r jcs 4n 60 20 1 604f 16 / 1 6 ? 1. ????????? ??? ?? ???? 2. ??? ? ?? 3. ????? ?? ??? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its pro duct either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be he sitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prio r notice. ?? ?????? ?? ?? 99 ? 132013 ? 8 6 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ? ?? 99 ? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678 411 fax: 86 - 432 - 6 4671533

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